By Lucas Mearian, Computerworld
Johns Hopkins University engineers are using diamonds to change the properties of an alloy used in phase-change memory, a change that could lead to the development higher capacity storage systems that retain data more quickly and last longer than current media. The process, explained this month in the online edition of Proceedings of the National Academy of Sciences (PNAS), focused on changes to the inexpensive GST phase-change memory alloy that’s composed of germanium, antimony and tellurium. “This phase-change memory is more stable than the material used in current flash drives. It works 100 times faster and is rewritable millions of times,” said the study’s lead author, Ming Xu, a doctoral student at the Whiting School of Engineering at Johns Hopkins University. to replace hard drives in computers and give them more memory,” he suggested.
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